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gas under 1000 K by synchrotron radiation photoemission spectroscopyYoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Surface Science, 566-568(Part.2), p.1124 - 1129, 2004/09
Times Cited Count：5 Percentile：29.73(Chemistry, Physical)The Si(001) oxidaion is an important reaction for not only semiconductor technology but also surface science. It is known that the growth mode forming oxide-layers is divided into two regions depending on surface temperature conditions. One is passive oxidation and the other is two dimensional island growth including SiO desorption. Since the oxygen uptake measurements have been measured in many reported studies, Si oxidatuion states related to the growth of oxide-layers have not been clarified yet. In order to measure the time evolution of Si oxidation states depending on the surface temperature, we have performed the real-time photoemission measurements using synchrotron radiation at SUREAC2000 in SPring-8 . We found that the Si
states was formed at the early oxidation stage in the two dimiensional island regions.
Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke
Shinku, 47(4), p.301 - 307, 2004/04
Recent research results on translational kinetic energy effects of incident oxygen molecules for Si(001) oxidation are summalized and introduced. The variation of surface temperature dependence of SiO desorption yield, oxygen uptake curves, and chemical bonding states depending on translational kinetic energy of oxygen molecules is described concretely. Eapecially, the translational kinetic energy effects on chemical reaction processes of concurrent oxide-layers formation and SiO desorption are discussed.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden
Kagaku Kogyo, 54(9), p.687 - 692, 2003/09
Real-time in-situ photoemission spectroscopic studies on Ti(0001) oxidation by O molecules at 473K-673K are reviewed. The Ti(0001) surface was changed from metal to oxide during exposure to oxygen gas. From the time dependent Ti-2p photoemission spectra, time evolution of each oxide component of Ti was clarified.
Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(7B), p.4676 - 4679, 2003/07
Times Cited Count：1 Percentile：5.63(Physics, Applied)Many studies of the thermal oxidation on Si(001) surface by O gas have been already carried out from both experimental and theoretical methods. The oxidation reaction kinetics have been studied by real time photoemission spectroscopy. Most reports, however, were performed at a fixed electron binding energy. We present the study of initial stage of thermal oxidation on Si(001) surface at the O pressure of 1x10
Pa performed by real time O-1s synchrotron radiation photoemission spectroscopy.All experiments were performed at SUREAC2000 at BL23SU in the SPring-8. The pure O gas of 1x10 Pa was fed into the reaction analysis chember through a variable leak valve. The results of oxygen uptake curves obtained by O-1s peak area intensities at the substrate temperature of 855K and 955K indicate that the Langmuir adsorption model provided the best fitting result for the 855K oxidation, whereas the oxidation at 955K was well explained by the autocatalytic reaction model.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Yamauchi, Yasuhiro*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Applied Surface Science, 216(1-4), p.395 - 401, 2003/06
Times Cited Count：19 Percentile：65.52(Chemistry, Physical)Real-time in-situ observation using photoelectron spectroscopy for elementary processes of Ti(0001) oxidation by O molecules has been performed at the surface reaction analysis apparatus installed at the BL23SU in the SPring-8. And the real-time observation has been also performed by RHEED-AES methods at Tohoku University. The partial pressure region of oxygen was from 2x10
Torr to 8x10
Torr. The surface temperature was 473 K and 673 K. The variation from clean Ti surface toward TiO was comfirmed by observation of Ti-2p and O-1s photoelectron spectra. Reflected electron intensity and O-KLL Auger electron intensity oscillated in the RHEED-AES measurements. These facts revealed that the surface morphological change of the oxidized Ti(0001) surface was associated not only with a disappearance of the surface metallic layer but also with a change of the oxidation state.
gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopyYoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Applied Surface Science, 216(1-4), p.388 - 394, 2003/06
Times Cited Count：9 Percentile：45.93(Chemistry, Physical)It is well known that the initial Si(0 0 1) oxidation by O gas is an important reaction system because it is usually used to form gate-oxide films on MOSFET. With decreasing the size of ULSI, it is necessary to control the surface reaction with atomic scales. In this study, we report 
observation of thermal oxidation using O gas on Si(0 0 1) surface by means of synchrotron radiation photoemission spectroscopy at the soft x-ray beamline, BL23SU, in the SPring-8. We clarified the chemisorption processes of O on Si(0 0 1) surface over 773K regions at the initial oxidation stages from the results of Si2p core-level shifts. The fundamental understanding of surface reaction is expected to contribute the development of the future nanotechnology.
Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(6B), p.3976 - 3982, 2003/06
Times Cited Count：6 Percentile：28.14(Physics, Applied)It is well known that the thermal oxidation on Si(001) surface is an important reaction system to form of the gate-oxide films in MOSFET, since it is necessary to control the film thickness under a few nano-meter scale. Thus, we have studied the oxygen uptake and the Si oxidation states depending on the oxidation times by using the synchrotron radiation photoemission spectroscopy in 1
10Pa of O at the surface temperature from 870K to 1120K. We clarified the oxidation depending on the surface temperature was explained by the kinetics (Langumuir and auto-catalytic model). Using real time photoemission spectroscopy, we found that the Si sepcies was not formed at the initial oxidation stage.
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Nuclear Instruments and Methods in Physics Research B, 200, p.376 - 381, 2003/01
Times Cited Count：10 Percentile：56.35(Instruments & Instrumentation)no abstracts in English
observation of oxidation states on Si(001)-21 during supersonic O molecular beam irradiationYoshigoe, Akitaka; Teraoka, Yuden
Atomic Collision Research in Japan, No.27, p.80 - 82, 2001/00
no abstracts in English
Seguchi, Tadao; Morita, Yosuke; Yoshida, Kenzo
EIM-84-131, p.27 - 36, 1984/00
no abstracts in English
; ; ; ;
JAERI-M 9475, 22 Pages, 1981/05
no abstracts in English
7 studied by real-time photoelectron spectroscopy and theoretical calculationsTang, J.*; Nishimoto, Kiwamu*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Abe, Sosuke*; Miura, Shu*; Narishige, Takuma*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
no journal, ,
Al(210) surface at room temperature using supersonic oxygen molecular beam; Real-time photoemission spectroscopic study with synchrotron radiationSyu, Y.*; Sakurai, Junya*; Teraoka, Yuden; Yoshigoe, Akitaka; Demura, Masahiko*; Hirano, Toshiyuki*
no journal, ,
/Si(001) interfaces induced by rapid temperature raisingOgawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka; Nishimoto, Kiwamu*; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
no journal, ,
